| PART |
Description |
Maker |
| RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| X4ODC24A X4ODC15A |
Input/Output Module; Input Current Max:15mA; Output Current:1A; Output Current Max:1A; Output Type:DC; Output Voltage:100V; Supply Voltage Max:30.5V; Supply Voltage Min:18V; Output Voltage Max:200V; Output Voltage Min:5V
Input/Output Module; Input Current Max:20mA; Output Current:1A; Output Current Max:1A; Output Type:DC; Output Voltage:100V; Supply Voltage Max:20V; Supply Voltage Min:10V; Output Voltage Max:200V; Output Voltage Min:5V
|
CRYDOM CORP
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| HT1260/26OG6 |
2.6kV V[drm] Max., 1260A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| MPAT-584643-10151MS MPAT-584643-10153FS MPAT-58464 |
5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
950 MHz - 1450 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
14000 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
10.95 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
3800 MHz - 4100 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.3 dB INSERTION LOSS-MAX
17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
4000 MHz - 8000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2 dB INSERTION LOSS-MAX
3100 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
8000 MHz - 12000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
18800 MHz - 19600 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
10700 MHz - 11700 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
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